A theory is presented for the homogeneous broadening of triplet localized v
ibrational mode (LVM) absorption lines arising from point defects with Td s
ymmetry. The source of the broadening is electric fields at a defect due to
other randomly distributed immobile charged defects. The line shape is cal
culated by making an application of a long-established result for the stati
stical distribution of field strength at the defect, due originally to Holt
smark. This provides a satisfactory explanation for recently reported unusu
al profiles for LVM absorption lines in semi-insulating InP heavily doped w
ith carbon. [S0163-1829(99)14739-8].