Resonant photoemission characterization of SnO

A thick layer of SnO, equivalent in its electronic properties to the bulk m aterial, has been investigated by means of resonant photoemission and the m athematical method of factor analysis. This study has shown that O2p, Sn5s, and Sn5p partial density of states are the main contributions to the valen ce band of this material. The distribution through the valence band of thes e partial contributions has been determined by spectral subtraction and fac tor analysis of the resonance photoemission spectra, as well as by band str ucture calculation. The resonance behavior (i.e., change in intensity with the photon energy) of these three contributions has been analyzed. The Sn5p levels present a typical Fano-like behavior with a minimum intensity at ab out 28 eV and a maximum at 40 eV. The Sn5s partial density distribution als o depicts a change in intensity as a function of the photon energy with a m inimum situated at 35 eV and a maximum at 55 eV. Tentatively, this behavior has been linked to the existence of a broad absorption feature detected by electron energy loss spectroscopy and constant final state spectra, both d epicting a broad maximum at about 50 eV. [S0163-1829(99)07339-7].