Line tension effects near first-order wetting transitions

Citation
Jy. Wang et al., Line tension effects near first-order wetting transitions, PHYS REV L, 83(18), 1999, pp. 3677-3680
Citations number
25
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
83
Issue
18
Year of publication
1999
Pages
3677 - 3680
Database
ISI
SICI code
0031-9007(19991101)83:18<3677:LTENFW>2.0.ZU;2-#
Abstract
The behavior of the line tension for n-octane or 1-octene droplets on a hex adecyltrichlorosilane coated Si wafer, near a first-order wetting transitio n, qualitatively agrees with the theoretical predictions of Indekeu [Physic a (Amsterdam) 183A, 439 (1992)] and the calculations of a number of other g roups. A simple phenomenological model possessing a repulsive barrier at l( o) = (5.1 +/- 0.2) nm and a horizontal correlation length xi = (0.40 +/- 0. 03) mu m provides a quantitative description of the experiments.