Effect of illumination on Schrodinger's wave function in the quantum well of MODFET and related device characteristics

The effect of illumination on the Schrodinger's wave function has been stud ied in a quantum well of n-AlGaAs/GaAs MODFET. The method is based on the s olution of the Schrodinger's equation and Poisson's equation. Partial depic tion of the active region of the MODFET has been considered. At the heteroj unction interface two different models for the quantum well have been assum ed: (1) a triangular potential well and (2) a modified triangular potential well of finite depth. The potential energy is calculated using the Poisson 's equation. From the knowledge of modified Schrodinger's wave function und er illumination we have calculated the sheet concentration and the drain so urce current. Also the off-set voltage of the device and the transfer chara cteristics have been evaluated and discussed. The I-V characteristic is com pared with available experimental data at a particular gate source voltage under illumination. (C) 1999 Elsevier Science Ltd. All rights reserved.