Accurate analytical delay expression for short channel CMOS SOI inverter using Monte Carlo simulation

Citation
S. Galdin et al., Accurate analytical delay expression for short channel CMOS SOI inverter using Monte Carlo simulation, SOL ST ELEC, 43(10), 1999, pp. 1869-1877
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Eletrical & Eletronics Engineeing
Journal title
SOLID-STATE ELECTRONICS
ISSN journal
00381101 → ACNP
Volume
43
Issue
10
Year of publication
1999
Pages
1869 - 1877
Database
ISI
SICI code
0038-1101(199910)43:10<1869:AADEFS>2.0.ZU;2-E
Abstract
This payer reports on an analysis of propagation delay tau(D) for deep sub- micron CMOS/SOI inverters. We derive simple propagation delay expressions f or step and ramp inputs, using Monte Carlo simulation. These expressions co nsist of linear combinations of time constants. As a physical device simula tion tool, the Monte Carlo method is well adapted to such a study, since it does not require any analytical model of electrical device parameters. The validity of the above expressions is critically checked via Monte Carlo si mulation of a wide range of inverters under various load conditions. The di screpancy between calculated and simulated propagation delay is less than 1 0%. (C) 1999 Elsevier Science Ltd. All rights reserved.