Early phase laser induced plasma diagnostics and mass removal during single-pulse laser ablation of silicon

The electron number density and temperature during the early phase (< 300 n s) of laser-induced plasmas from silicon using a 266-nm, 3-ns Nd:YAG laser were deduced via spectroscopic methods. These parameters were measured as a function of delay time vs. irradiance in the range of 2-80 GW/cm(2), and c ompared with crater volume measurements. A dramatic change in plasma charac teristics (electron number density, temperature, and degree of ionization) as well as a sharp increase of mass removal was observed when the irradianc e was increased beyond a threshold of 20 GW/cm(2). Possible mechanisms such as inverse bremsstrahlung and self-regulation were used to describe these data in the low irradiance region. Laser self-focusing and critical tempera ture are discussed to explain the dramatic changes after the irradiance rea ches the threshold. (C) 1999 Elsevier Science B.V. All rights reserved.