Future in-fab applications of total reflection X-ray fluorescence spectrometry for the semiconductor industry

In-fab analytical methods are of increasing interest for wafer monitoring i n advanced semiconductor device manufacturing. In particular, an analytical method which allows non-destructive measurements of implant dose and surfa ce roughness would be very beneficial. We investigated the capabilities of total reflection X-ray fluorescence spectrometry (TXRF) to determine implan t dose and surface roughness. These advanced applications of TXRF can be us ed to monitor processes like implantation, rapid thermal annealing, and che mical mechanical polish. As implants in Si at implant energies of 2 keV, 10 keV and 50 keV were studied. Angle resolved TXRF measurements were perform ed with a commercial Rigaku 3750 system. The TXRF results were compared to secondary ion mass spectrometry (SIMS) measurements. (C) 1999 Elsevier Scie nce B.V. All rights reserved.