Enhanced analysis of particles and vapor phase decomposition droplets by total-reflection X-ray fluorescence

The semiconductor industry requires lower and lower detection limits for su rface metal contamination on Si wafers with each new reduction in feature s ize of semiconductor devices. The combination of total reflection X-ray flu orescence and a preconcentration step like vapor phase decomposition provid es the level of detectability needed for current and next generation semico nductor devices. Examples are given for both the transition and light eleme nts. Accurate positioning is required for reproducible results. A new dropl et search routine is described which can be used to accurately and quickly center the vapor phase decomposition droplet under the detector. A procedur e for measuring particles on a wafer by reading a particle analyzer result data file directly is also described. (C) 1999 Elsevier Science B.V. All ri ghts reserved.