Scanning tunneling microscopy investigation of the Si(103)-(1 x 1)-in surface

Authors
Gai, Z Yang, WS Xue, QK Sakurai, T Zhao, RG
Citation
Z. Gai et al., Scanning tunneling microscopy investigation of the Si(103)-(1 x 1)-in surface, SURF REV L, 6(3-4), 1999, pp. 405-409
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SURFACE REVIEW AND LETTERS
ISSN journal
0218625X → ACNP
Volume
6
Issue
3-4
Year of publication
1999
Pages
405 - 409
Database
ISI
SICI code
0218-625X(199906/08)6:3-4<405:STMIOT>2.0.ZU;2-2
Abstract
In view of the special importance of the IV(103)-(1 x 1)-III surface struct ures to the III/IV interfacial systems, in this paper the atomic structure of the Si(103)-(1 x 1)-In surface is studied by means of scanning tunneling microscopy. The model that contains an indium and a silicon adatom in a un it cell, which has passed the test of low energy electron diffraction calcu lations, is confirmed to be correct. The dangling bond of the silicon adato m is found to be essentially empty.