Change in the acoustic emission spectrum of dislocation-containing siliconunder current and thermal influences

Citation
Am. Orlov et al., Change in the acoustic emission spectrum of dislocation-containing siliconunder current and thermal influences, TECH PHYS L, 25(11), 1999, pp. 867-869
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
25
Issue
11
Year of publication
1999
Pages
867 - 869
Database
ISI
SICI code
1063-7850(199911)25:11<867:CITAES>2.0.ZU;2-9
Abstract
Changes in the acoustic emission spectra of dislocation-containing silicon under current and thermal influences are investigated. The shift of the max imum frequency of the acoustic emission spectrum is explained and described using the sharp kink model, The stopping constant, velocity, and mobility of the dislocations are estimated. (C) 1999 American Institute of Physics. [S1063-7850(99)01011-3].