Oxidized AlxGa1-xAs heterostructure planar waveguides

Waveguiding by total internal reflection is demonstrated within AlxGa1-xAs semiconductor heterostructures which have been fully oxidized in water vapo r at similar to 490 degrees C. Refractive index, mode propagation constant, propagation loss (less than or equal to 3 cm(-1)) at lambda(0) = 1.3 and 1 .55 mu m, secondary ion mass spectrometry depth profile, and Fourier transf orm infrared transmission spectra measurements are presented to characteriz e a multimode single-heterostructure oxide waveguide. An index contrast of Delta n = 0.06 is observed between oxidized x = 0.4 and x = 0.8 AlxGa1-xAs oxide layers. Absorption loss at 1.55 mu m is observed due to OH groups. Ne ar-field images are presented showing waveguiding in a single-mode oxide do uble heterostructure. (C) 1999 American Institute of Physics. [S0003-6951(9 9)05446-7].