Effective g(*) factor of two-dimensional electrons in GaN/AlGaN heterojunctions

The conduction band parameters of two-dimensional (2D) electrons in high de nsity GaN/AlGaN heterojunctions were studied using the cyclotron resonance and magnetotransport techniques in high magnetic fields (24 T) and low temp eratures (300 mK). The Landau level splitting determined from the cyclotron resonance experiment yielded the effective mass of 2D carriers, m* = 0.242 +/- 0.002 m(0). The Lande g factor for the 2D electrons (g = 2.06 +/- 0.04 ) was determined from the angular dependence of the amplitude of Shubnikov- de-Haas oscillations experiments in tilted magnetic field. (C) 1999 America n Institute of Physics. [S0003-6951(99)00845-1].