Improved structural properties of SiO2 sol-gel films

Silicon oxide films with a small amount of alpha alumina particles embedded in the glass matrix were prepared using the sol-gel method. It is found th at the structural properties of these samples are superior to those observe d in similarly prepared films, but without the alumina particles. This conc lusion was deduced from analysis of the oxygen diffusion measurements throu gh the SiO2 layer, using a novel method, and from the measured dielectric b reakdown field. It is found that the oxygen diffusion coefficient is much l ower and the dielectric breakdown field is larger in samples with the alumi na particles. (C) 1999 American Institute of Physics. [S0003-6951(99)04146- 7].