Microfabrication by UV femtosecond laser ablation of Pt, Cr and indium oxide thin films

Citation
P. Papakonstantinou et al., Microfabrication by UV femtosecond laser ablation of Pt, Cr and indium oxide thin films, APPL SURF S, 151(3-4), 1999, pp. 159-170
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
151
Issue
3-4
Year of publication
1999
Pages
159 - 170
Database
ISI
SICI code
0169-4332(199910)151:3-4<159:MBUFLA>2.0.ZU;2-Z
Abstract
We demonstrate the direct deposition of Pt, Cr and In2O3 microstructures on glass using a femtosecond laser assisted technique. A metal (Pt, Cr) or ox ide (In2O3) source film is first deposited on an optically transparent quar tz carrier and is brought in intimate contact with a receiver glass substra te using an especially designed vacuum cell. An ultrashort excimer laser pu lse ablates the source film at the quartz/film interface and results in the forward-transfer deposition of material onto the nearby glass receiver. Th e morphology of the ablated and transferred features was studied by means o f scanning electron and atomic force microscopies. It was found that the go od adhesion of the pre-deposited source film on the quartz substrate and th e intimate contact between the source and receiver glass are two critical f actors for achieving efficient transfer printing. The optimal deposited mor phology in terms of spatial resolution and dispersion was produced using 30 -40 nm and 50-60 nm thick source films of metals and In2O3 respectively. In addition, the laser fluence had to be just above the threshold for printin g (E-pr). This was 150 +/- 20 mJ/cm(2) for Pt, Cr and 60 +/- 20 mJ/cm(2) fo r the In2O3. Fluences greater than E-pr lead to the development of crater l ike features with excessive spread on the periphery rim. Similar behaviour was observed for micro-prints obtained using a backward-transfer configurat ion. Sub-micron Pt dots were obtained from a 30 nm thick Pt source film, ir radiated with a 3 mu X 3 mu m spot at a fluence of similar to 150 mJ/cm(2). The production of these sub-micron dots was possible due to limited therma l diffusion and sharp ablation threshold existent in fs laser processing. ( C) 1999 Elsevier Science B.V. All rights reserved.