Preparation and characterization of ITO films deposited on polyimide by reactive evaporation at low temperature

Authors
Ma, J Zhang, DH Zhao, JQ Tan, CY Yang, TL Ma, HL
Citation
J. Ma et al., Preparation and characterization of ITO films deposited on polyimide by reactive evaporation at low temperature, APPL SURF S, 151(3-4), 1999, pp. 239-243
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
APPLIED SURFACE SCIENCE
ISSN journal
01694332 → ACNP
Volume
151
Issue
3-4
Year of publication
1999
Pages
239 - 243
Database
ISI
SICI code
0169-4332(199910)151:3-4<239:PACOIF>2.0.ZU;2-J
Abstract
Sn-doped indium oxide (ITO) films have been prepared on polyimide (PI) thin film substrate at low substrate temperature (80-240 degrees C) by reactive evaporation. The samples were deposited as polycrystalline films with a cu bic bixbyite structure and a preferred orientation with the (111) plan para llel to the substrate. The structural, optical and electrical properties of the obtained films depending on deposition temperature have been investiga ted. High quality films with resistivity as low as 7 X 10(-4) Omega cm and transmittance over 80% have been obtained by suitably controlling the depos ition parameters. (C) 1999 Elsevier Science B.V. All rights reserved.