J. Ma et al., Preparation and characterization of ITO films deposited on polyimide by reactive evaporation at low temperature, APPL SURF S, 151(3-4), 1999, pp. 239-243
Sn-doped indium oxide (ITO) films have been prepared on polyimide (PI) thin
film substrate at low substrate temperature (80-240 degrees C) by reactive
evaporation. The samples were deposited as polycrystalline films with a cu
bic bixbyite structure and a preferred orientation with the (111) plan para
llel to the substrate. The structural, optical and electrical properties of
the obtained films depending on deposition temperature have been investiga
ted. High quality films with resistivity as low as 7 X 10(-4) Omega cm and
transmittance over 80% have been obtained by suitably controlling the depos
ition parameters. (C) 1999 Elsevier Science B.V. All rights reserved.