It is known that the RCA Standard Clean 1, which is used repeatedly during
device fabrication, can cause etching of Si. In some process flows, such et
ching can be important when fabricating devices with thin films, for exampl
e, in silicon-on-insulator technology. We show that 25-30 Angstrom of Si is
etched away by a modified version of the SCl clean (1:8:64 parts by weight
of NH4OH, H2O2, and H2O), when it is applied for 10 min to a bare Si layer
on top of SiO2. (C) 1999 The Electrochemical Society. S1099-0062(99)07-069
-8. All rights reserved.