Novel dual gate oxide process with improved gate oxide integrity reliability

We have investigated the degradation of thick gate oxide in conventional du al gate oxide process; thick oxide grown by a new dual gate oxide process s howed an improved gate oxide integrity and reliability compared with that o f a conventional dual gate oxide process. To meet the requirement of integr ating 3 and 6 nm dual gate oxide on a single chip operated under the bias o f 1.8 and 2.5 V, respectively, this novel dual gate oxide process flow, wit hout gate oxide thinning at a shallow trench isolation corner, was develope d. (C) 1999 The Electrochemical Society. S1099-0062(99)08-064-5. All rights reserved.