A model for the open circuit voltage relaxation in Cu(In,Ga)Se-2 heterojunction solar cells

Citation
T. Meyer et al., A model for the open circuit voltage relaxation in Cu(In,Ga)Se-2 heterojunction solar cells, EPJ-APPL PH, 8(1), 1999, pp. 43-52
Citations number
35
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
ISSN journal
12860042 → ACNP
Volume
8
Issue
1
Year of publication
1999
Pages
43 - 52
Database
ISI
SICI code
1286-0042(199910)8:1<43:AMFTOC>2.0.ZU;2-2
Abstract
This article investigates the electronic transport properties of ZnO/CdS/Cu (In,Ga)Se-2 heterojunction solar cells during and after illumination or for ward bias in the dark. We observe a relaxation of the open circuit voltage under constant illumination as well as a relaxation current in the dark. Bo th phenomena are accompanied by an increase of the sample capacitance. We i ntroduce a general quantitative model concept for the open circuit voltage relaxation and related effects in heterojunction devices that explains the phenomena as a consequence of the persistent capture of charge carriers wit hin the space charge region. We apply our concept to develop a specific qua ntitative model for the observed metastablity in Cu(In,Ga)Sea heterojunctio n solar cells.