Small-signal analysis of 1.3-mu m microcavity light-emitting diodes

Citation
P. Landais et al., Small-signal analysis of 1.3-mu m microcavity light-emitting diodes, IEEE PHOTON, 11(11), 1999, pp. 1342-1344
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
11
Issue
11
Year of publication
1999
Pages
1342 - 1344
Database
ISI
SICI code
1041-1135(199911)11:11<1342:SAO1MM>2.0.ZU;2-R
Abstract
The modulation speed of 1.3-mu m microcavity light-emitting diodes (MCLED's ) has been measured using a small-signal modulation analysis, A speed of 26 0 MHz using a 25-mu m diameter sample at current density of 10 kA/cm(2) has been achieved, The carrier confinement has been calculated for several car rier densities in order to investigate the origin of the speed limitation. By comparing the performance of the 1.3-mu m MCLED's with that of the 990-n m devices we conclude that the limiting factor on the speed seems to be a l ack of carrier confinement in the quantum wells and not a cavity effect.