Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate

Authors
Zhukov, AE Kovsh, AR Ustinov, VM Shernyakov, YM Mikhrin, SS Maleev, NA Kondrat'eva, EY Livshits, DA Maximov, MV Volovik, BV Bedarev, DA Musikhin, YG Ledentsov, NN Kop'ev, PS Alferov, ZI Bimberg, D
Citation
Ae. Zhukov et al., Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate, IEEE PHOTON, 11(11), 1999, pp. 1345-1347
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
11
Issue
11
Year of publication
1999
Pages
1345 - 1347
Database
ISI
SICI code
1041-1135(199911)11:11<1345:COOLQD>2.0.ZU;2-Z
Abstract
Continuous-wave operation near 1.3 mu m of a diode laser based on self-orga nized quantum dots (QD's) on a GaAs substrate is demonstrated. Multiple sta cking of InAs QD planes covered by thin InGaAs layers allows us to prevent gain saturation and achieve long-wavelength lasing with low threshold curre nt density (90-105 A/cm(2)) and high output power (2.7 W) at 17 degrees C h eatsink temperature. It is thus confirmed that QD lasers of this kind are p otential candidates to substitute InP-based lasers in optical fiber systems .