Manufacturing of Cu/electroless nickel/Sn-Pb flip chip solder bumps

Authors
Citation
Kl. Lin et Yc. Liu, Manufacturing of Cu/electroless nickel/Sn-Pb flip chip solder bumps, IEEE T AD P, 22(4), 1999, pp. 575-579
Citations number
11
Categorie Soggetti
Material Science & Engineering
Journal title
IEEE TRANSACTIONS ON ADVANCED PACKAGING
ISSN journal
15213323 → ACNP
Volume
22
Issue
4
Year of publication
1999
Pages
575 - 579
Database
ISI
SICI code
1521-3323(199911)22:4<575:MOCNFC>2.0.ZU;2-J
Abstract
A process for manufacturing Cu/electroless Ni/Sn-Pb solder bump is discusse d in this paper. An attempt to replace zincation with a Cu film as an activ e layer for the electroless Ni (EN) deposition on Al electrode on Si wafer is presented. Cu/electroless Ni is applied as under bump metallurgy (UBM) f or solder bump, The Cu film required repeated etches with nitric acid along with activation to achieve a satisfactory EN deposit. Fluxes incorporating rosin and succinic acid were investigated for wetting kinetics and reflow effectiveness of the electroplated solder bump, The solder plating current density and the reflow condition for achieving solder bumps with uniform bu mp height were described, The Cu/EN/Sn-Pb solder system was found to be suc cessfully produced on Al terminal in this study that avoids using zincating process.