The cooling semiconductor photographic system for visualization of the infrared radiation

The possibility of increasing spectral sensitivity of an ionization-type se miconductor photographic system for a given photosensitivity of an Si:Zn se miconductor detector has been stud led. The cooling photographic system is designed to extend the sensitivity of the photographic system towards longe r infrared (IR) wavelengths. The IR radiation excites the photosensitive se miconductor detector of the device, thus controlling the current density an d the visible light emission from the gas discharge gap. The photodetector was irradiated on the back side with infrared radiation in a particular wav elength range which was used to control the photoconductivity of the detect or. The size of the discharge gap and the residual gas pressure (60 Torr) a re chosen to ensure a sufficiently bright light. The current-voltage charac teristics of the discharge cell with a semiconducting photodetector are obt ained experimentally.