Carbon in grown-in defects in Czochralski silicon and its influence on gate-oxide defects

We systematically investigated the impurities situated in the octahedral vo id defects in Czochralski silicon crystal by using electron energy-loss spe ctroscopy and Auger electron spectroscopy. As a result, we found that carbo n cohesion was observed on the inner walls of the void defects. The carbon concentration on the inner walls was estimated to be about 2 x 10(14)/cm(2) . This result suggests that void defects with this amount of carbon could s eriously affect the integrity of gate-oxides of metal-oxide-silicon integra ted circuits.