Crystallographic structures and parasitic resistances of self-aligned silicide TiSi2/self-aligned nitrided barrier layer/selective chemical vapor deposited aluminum in fully self-aligned metallization metal oxide semiconductor field-effect transistor

lIn deep submicron metal oxide semiconductor field-effect transistor (MOSFE T) structures, parasitic resistances of source/drain and gate (S/D&G) regio ns limit device performance. For the reduction of parasitic resistances, we have previ ously proposed a fully self-aligned metallization (FSAM) MOSFET using selective aluminum chemical vapor deposition (Al CVD) technology. Th e features of FSAM-MOSFET are (1) self-aligned silicide (SALICIDE) for low TiSi2/n(+)-Si contact resistances in S/D regions, (2) self-aligned barrier layer on TiSi2 surface, and (3) selective Al deposition on S/D&G regions fo r low sheet resistances. In this study, crystallographic structures and par asitic resistances of SALICIDE TiSi2/self-aligned nitrided barrier layer/se lective CVD Al structures have been investigated. It has been experimentall y confirmed that (1) C49-TiSi2/n(+)-Si has lower contact resistance than C5 4-TiSi2/n(+)-Si, (2) the 10 nm amorphous Ti-Si-N barrier layer has stable t hermal endurance and does not increase the contact resistances, and (3) the selective CVD Al layer reduces the sheet resistances of the S/D. Therefore , the combination of SALICIDE TiSi2, self-aligned barrier layer and selecti ve CVD Al is promising for the low-temperature FSAM-MOSFET process.