Single-electron memory fabricated from doped silicon-on-insulator film

We investigated a memory device that uses a single-electron transistor as t he read-out component and a Si floating dot as the memory node. The device was fabricated fi om highly-doped silicon-on-insulator (SOI) film by using electron-beam lithography and a high-resolution resist (calixarene). We obs erved the charging and discharging of the floating dot and determined that the memory operation was not affected by the background charge, which is cr ucial for single-electron devices.