Investigation of low-temperature deposition of silicon dioxide on indium phosphide by liquid phase deposition

Authors
Wang, NF Houng, MP Wang, YH
Citation
Nf. Wang et al., Investigation of low-temperature deposition of silicon dioxide on indium phosphide by liquid phase deposition, JPN J A P 1, 38(10), 1999, pp. 6071-6072
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Issue
10
Year of publication
1999
Pages
6071 - 6072
Database
ISI
SICI code
Abstract
A new low-temperature process (35-45 degrees C)for the deposition of high-q uality silicon dioxide (SiO2) films on indium phosphide (InP) by liquid pha se deposition (LPD) is proposed. The LPD-SiO2 film shows good, reliable qua lity in both physicochemical and electrical properties, which include a low effective net surface charge density per unit area (Q(ss)/q = 3.1 x 10(11) cm(-2)), a small leakage current (6.64 pA, at -5 V), and a high dielectric breakdown strength (6.47 MV/cm), due to the lower deposition temperature.