Highly resolved maskless patterning on InP by focused ion beam enhanced wet chemical etching

Authors
Konig, H Reithmaier, JP Forchel, A
Citation
H. Konig et al., Highly resolved maskless patterning on InP by focused ion beam enhanced wet chemical etching, JPN J A P 1, 38(10), 1999, pp. 6142-6144
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
38
Issue
10
Year of publication
1999
Pages
6142 - 6144
Database
ISI
SICI code
Abstract
The fabrication of high resolution patterns on InP-substrates by focused io n beam implantation and selective wet chemical etching has been investigate d. InP acts as positive resist for Ga+ focused ion beam exposure and develo pment by HF. The values of contrast and sensitivity have been determined to 12 and 1.5 x 10(13) cm(-2), respectively. By this technique short period l ine gratings with a linewidth of 30 nm have been fabricated.