Characterization of dielectric etching processes by X-ray photoelectron spectroscopy analyses in high aspect ratio contact holes

X-ray photoelectron spectroscopy (XPS) analyses of high aspect ratio struct ure etched in SiO2 and organic low dielectric constant materials are presen ted. Analyses are performed after etching using commercial etching tools an d standard processes developed for 0.18 mu m design rules. Using electron s hadowing by adjacent features, differential charging of insulating features and angle-resolved XPS, it is possible to separate the contributions origi nating from the sidewalls and bottoms of high aspect ratio contact holes. C orrelation between XPS analyses and etch mechanisms are also discussed.