p-type electrical conduction in ZnO thin films by Ga and N codoping

Authors
Joseph, M Tabata, H Kawai, T
Citation
M. Joseph et al., p-type electrical conduction in ZnO thin films by Ga and N codoping, JPN J A P 2, 38(11A), 1999, pp. L1205-L1207
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
38
Issue
11A
Year of publication
1999
Pages
L1205 - L1207
Database
ISI
SICI code
Abstract
We report the realization of p-type behavior in ZnO thin films, which are p repared by codoping method using Ga (donor) and N (acceptor) as the dopants . Especially using active N formed by passing N2O gas through an electron c yclotron resonance (ECR) plasma source is quite effective for the acceptor doping. We have observed a room temperature resistivity of 2 Omega cm and a hole concentration of 4 x 10(19) cm(-3). These values are enough high for practical applications in various oxide electronic devices.