Microphotoluminescence intensity images of InGaN single quantum wells

Photoluminescence spectra and microphotoluminescence images were measured a t room temperature for an In0.06Ga0.94N single quantum well (SQW) and an In 0.14Ga0.86N SQW grown by atmospheric-pressure metalorganic chemical vapor d eposition. The spatial homogeneity of their optical properties was studied by means of a photoluminescence intensity imaging technique of typical spat ial resolution 150 nm It is found that the microphatoluminescence images ta ken at different wavelengths show very little difference for the In0.06Ga0. 94N SQW while some parts are complementary for the In0.14Ga0.8N SQW, This r esult strongly suggests that the additional intensity fluctuation which app ears with increasing indium composition is due to phase separation in the I nGaN layers.