Nanoscale switching and domain structure of ferroelectric BaBi4Ti4O15 thinfilms

Citation
C. Harnagea et al., Nanoscale switching and domain structure of ferroelectric BaBi4Ti4O15 thinfilms, JPN J A P 2, 38(11A), 1999, pp. L1255-L1257
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
11A
Year of publication
1999
Pages
L1255 - L1257
Database
ISI
SICI code
Abstract
Ferroelectric domain structures of epitaxial BaBi4Ti4O15 (BBiT) thin films with different orientations have been imaged for the first time at the nano meter scale. Using the piezoresponse mode of scanning force microscopy it w as demonstrated that the spontaneous polarization of BBiT has no component along the c-axis of the unit cell. Local piezoelectric hysteresis loops fro m non c-oriented grains with lateral sizes of 300 to 500 nm were recorded. The saturation values of the piezoelectric constant perpendicular to the c- axis are comparable to those measured macroscopically. A distinct ferroelec tric behavior was still found in grains as small as 300 nm in lateral size.