Gas-source migration-enhanced epitaxial growth of AlAs/AlP superlattices

Gas-source migration-enhanced epitaxial growth of AlAs/AlP short-period sup erlattices on (001) GaAs substrates at low growth temperature was studied b y X-ray diffraction. The intensities of the peaks, which are related to the superlattices in X-ray diffraction patterns, increased with decreasing gro wth temperatures. The intensities of the peaks were influenced by the group V supply According to the X-ray diffraction patterns of (AlAs)(n)/(AlP)(n) (n = 1, 2) short-period superlattices grown at 400 degrees C, the average heterointerface roughness of the (AlAs)(1)/(AIP)(1) superlattice is estimat ed to be 0.17 Angstrom and our growth technique shows good potential for ob taining As- and P-containing compounds.