SiO vapor pressure in an SiO2 glass/Si melt/SiO gas equilibrium system

SiO Vapor pressure concerning Czochralski (CZ) Si crystal growth has been m easured successfully by an SiO2 glass/Si melt/SiO gas equilibrium system. A Si sample was sealed in a silica ampoule after being evacuated, and the am poule was heated to a certain temperature ranging from 1450 degrees C to 15 40 degrees C in an Ar atmosphere. SiO vapor pressure was determined from th e balance of pressure between inside and outside the ampoule. The result sh ows that SiO vapor pressure increases with increasing temperature. It is al so found that the SiO vapor pressure shifts slightly from that calculated f rom thermodynamic data, especially at higher temperatures.