Activation energy of nanoscale 3C-SiC island growth on Si substrate

Activation energy has been evaluated for the nanoscale island growth of 3C- SiC films deposited on (111) Si by hydrogen plasma sputtering using a SiC t arget. The value of 5.6 kcal/mol obtained for the island growth is lower th an that reported for 3C-SiC film growth. After the completion of nucleation , the SiC islands mainly grew in the diameter direction of each island. The low activation energy is related to the formation of an amorphous SiC phas e during the growth of the island films.