Capacitively-detected magnetic resonance in hydrogenated amorphous siliconsolar cells

Spin-dependent transport processes in hydrogenated amorphous silicon (a-Si: H) solar cells at high frequencies are studied with capacitively-detected m agnetic resonance (CDMR). A resonant increase of the capacitance at room te mperature is found with a g-factor of 2.0055, characteristic for the spin-d ependent trapping of electrons at neutral dangling bonds. It is shown that with the help of spin-dependent capacitance measurements quantitative infor mation on the defect density in the device can be obtained, a particular ad vantage over conventional electrically detected magnetic resonance (EDMR) w here resonant changes of the dc conductivity are measured.