High temperature characteristics of nearly 1.2 mu m GaInAs/GaAs/AlGaAs lasers

Authors
Chen, ZB Schlenker, D Miyamoto, T Kondo, T Kawaguchi, M Koyama, F Iga, K
Citation
Zb. Chen et al., High temperature characteristics of nearly 1.2 mu m GaInAs/GaAs/AlGaAs lasers, JPN J A P 2, 38(10B), 1999, pp. L1178-L1179
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
38
Issue
10B
Year of publication
1999
Pages
L1178 - L1179
Database
ISI
SICI code
Abstract
We have demonstrated a highly strained GaInAs/GaAs double quantum well lase r operating at nearly 1.2 mu m with AlGaAs cladding layers for the first ti me. Our previously reported high characteristic temperature of 150 K was im proved to 202 K for a 410-mu m-long broad-area GaInAs/GaAs/AlGaAs laser in the temperature range from 30 degrees C to 70 degrees C. The threshold curr ent density of this laser was as low as 370 A/cm(2).