Thermodynamic analysis of the Ga-In-As-Sb-C-H system

The Ga-Tn-As-Sb-C-H system composed of 8 phases and 74 gaseous species is s et up and analyzed thermodynamically to simulate the metalorganic vapor-pha se epitaxy (MOVPE) process for (Ga,In)(As,Sb) semiconductor growth. Several phase diagram sections and the composition dependences of semiconductors o n the amount of input III-V sources are calculated with the conditions defi ned according to the practical MOVPE processes. The experimental data are c ollected and compared with the calculated results. (C) 1999 Elsevier Scienc e B.V. All rights reserved.