Growth morphology of primary silicon in cast Al-Si alloys and the mechanism of concentric growth

Citation
Ry. Wang et al., Growth morphology of primary silicon in cast Al-Si alloys and the mechanism of concentric growth, J CRYST GR, 207(1-2), 1999, pp. 43-54
Citations number
16
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
207
Issue
1-2
Year of publication
1999
Pages
43 - 54
Database
ISI
SICI code
0022-0248(199911)207:1-2<43:GMOPSI>2.0.ZU;2-K
Abstract
Faceted growth of primary silicon crystals in cast hypereutectic aluminium- silicon alloys is studied by measurement of spacings between successive gro wth traces observed in microsections. A general equation, derived to specif y conditions for stable growth of silicon crystal, is supported by spacing measurements. Some examples of departures from stable silicon growth are st udied. Three stages in the development of faceted crystal growth are recogn ized, changing from spheroidal to faceted to unstable with increasing cryst al diameter. (C) 1999 Elsevier Science B.V. All rights reserved.