Monocrystalline films of sphalerite-type ZnSe grown by atomic layer epitaxy in a gas flow system

Citation
A. Szczerbakow et al., Monocrystalline films of sphalerite-type ZnSe grown by atomic layer epitaxy in a gas flow system, J CRYST GR, 207(1-2), 1999, pp. 148-149
Citations number
4
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
207
Issue
1-2
Year of publication
1999
Pages
148 - 149
Database
ISI
SICI code
0022-0248(199911)207:1-2<148:MFOSZG>2.0.ZU;2-I
Abstract
Monocrystalline films of sphalerite-type ZnSe were produced on GaAs and ZnS /GaAs substrates from zinc and selenium by atomic layer epitaxy ALE in a ga s flow: system. X-ray diffraction and photoluminescence tests were performe d. (C) 1999 Elsevier Science B.V. All rights reserved.