Kinetics of interfacial reaction between eutectic Sn-Pb solder and Cu/Ni/Pd metallizations

The interfacial microstructure and the kinetics of interfacial reaction bet ween the eutectic Sn-Pb solder and electroplated Ni/Pd on Cu substrate (Cu/ Ni/NiPd/ Ni/Pd) were studied both in the liquid- and solid-state of the sol der. The liquid-state reaction was carried out at 200 degrees C, 225 degree s C, and 250 degrees C for 30 s, 60 s, 150 s, and 300 s at each temperature . The solid-state aging was carried out at 125 degrees C for up to 43 days. The interfacial microstructure was characterized by imaging and energy dis persive x-ray analysis in scanning electron microscope. Depending on the th ickness of the Pd-layer, both PdSn4 and PdSn3 phases were observed near the solder-substrate interface. These results were correlated with the initial thickness of the Pd-layer and the diffusion path in the calculated Pd-Pb-S n isothermal sections. For the aforementioned isothermal reactions, only on e Ni-bearing intermetallic (Ni3Sn4) was observed at the solder-substrate in terface. The presence of Ni3Sn4 intermetallic was consistent with the expec ted diffusion path based on the calculated Ni-Pb-Sn isothermal sections. Se lective etching of solder revealed that PdSn4 and PdSn3 had a faceted rod m orphology, and Ni,Sn, had a faceted scallop morphology which gave rise to r ugged Ni3Sn4-solder interface. Segregation of Pb on the facets of PdSn4 and PdSn3 was also observed. The growth kinetics of the Ni3Sn4 intermetallic l ayer at the solder-substrate interface was analyzed using an Arrhenius-type of equation. In the thickness regime of 0.16 to 1.2 mu m, the growth kinet ics yielded a time exponent n = 3.1, an apparent activation energy of 9260 J/mol both in the liquid- and solid-state of the solder, and a temperature dependent pre-exponential factor. The latter was attributed to the presence of one or more phases ahead of the growing layer.