The effect of a weak W/SiC interface on the strength of Sigma silicon carbide monofilament

Citation
K. Dyos et Ra. Shatwell, The effect of a weak W/SiC interface on the strength of Sigma silicon carbide monofilament, J MICROSC O, 196, 1999, pp. 175-184
Citations number
11
Categorie Soggetti
Multidisciplinary
Journal title
JOURNAL OF MICROSCOPY-OXFORD
ISSN journal
00222720 → ACNP
Volume
196
Year of publication
1999
Part
2
Pages
175 - 184
Database
ISI
SICI code
0022-2720(199911)196:<175:TEOAWW>2.0.ZU;2-S
Abstract
Fractography studies have shown that the strength-determining flaws in sili con carbide monofilaments are generally at the core/silicon carbide interfa ce or in the vicinity of the outside, carbon-based coating. In tungsten-cor ed monofilaments like DERA Sigma, the W/SiC flaws primarily determine the s trength, Fracture is accompanied by brittle failure or. the tungsten. The c rack propagates simultaneously outwards through the silicon carbide, inward s through the tungsten and also around the W/SiC interface before being def lected into the tungsten or out through the silicon carbide. Experiments de positing boundary layers between the tungsten and silicon carbide have resu lted in significantly different fracture behaviour. The tungsten fails in a ductile manner and the strength-determining flaws are located predominantl y at the outside surface of the silicon carbide, This behaviour is discusse d in terms of models proposed by E, Martin and W. Curtin. It is thought tha t the work will ultimately lead to a significantly stronger, tungsten-based monofilament.