Kinematic analysis and measurement of temperature rise on a pad in chemical mechanical planarization

Pad temperature measurement using a thermal camera during chemical mechanic al planarization (CMP) process is an effective means for monitoring the pad life and removal uniformity. In this study, we present a novel kinematic a nalysis method based on the principle of energy transformation and conserva tion to account for the pad temperature rise. The relative speed between th e wafer and the pad determines the energy content causing the temperature r ise. The pad temperature rise is measured by the thermal image method, with those results agreeing with the prediction of kinematic calculations. The pad temperature is closely related to the outcome of CMP, such as removal r ate, uniformity, and pad life. Results in this study provide further insigh t into the relation between the pad temperature distribution, wafer uniform ity, and pad life, thereby contributing to a more effective process control . (C) 1999 The Electrochemical Society. S0013-4651(99)02-045-5. All rights reserved.