Transverse-mode structure and pattern formation in oxide-confined vertical-cavity semiconductor lasers

Authors
Hegarty, SP Huyet, G Porta, P McInerney, JG Choquette, KD Geib, KM Hou, HQ
Citation
Sp. Hegarty et al., Transverse-mode structure and pattern formation in oxide-confined vertical-cavity semiconductor lasers, J OPT SOC B, 16(11), 1999, pp. 2060-2071
Citations number
43
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS
ISSN journal
07403224 → ACNP
Volume
16
Issue
11
Year of publication
1999
Pages
2060 - 2071
Database
ISI
SICI code
0740-3224(199911)16:11<2060:TSAPFI>2.0.ZU;2-F
Abstract
We analyze the transverse profiles of oxide-confined vertical-cavity laser diodes as a function of aperture size. For small apertures we demonstrate t hat thermal lensing can be the dominant effect in determining the transvers e resonator properties. me also analyze pattern formation in lasers with la rge apertures where we observe the appearance of tilted waves. (C) 1999 Opt ical Society of America [S0740-3224(99)00611-6].