Fluorinated heteroaromatic polyethers for low dielectric constant/high temperature applications

Several series of poly(arylene ether)s with trifluoromethyl substituents we re prepared and characterized. These materials are potential candidates for the use as low dielectric constant insulators (intermetal dielectrics, IMD , and interlayer dielectrics, ILD) on microchips. Thermal stability up to 4 50 degrees C and a dielectric constant below 3 preferably below 2.5) is req uired for this application. The thermal stability of the poly(arylene ether )s was increased from 320 degrees C to more than 500 degrees C by optimizat ion of the structure of the repeating unit. The dielectric constant of one of the most promising structures was determined to be 2.8. In addition, pla sma polymerized thin films from hexafluorobenzene, tetrafluorobenzene, perf luorotoluene and perfluorodecaline were prepared and characterized with res pect to solubility, dielectric constant, adhesion, and thermal stability.