Electron field emission from nitrogen-containing diamond-like carbon filmsdeposited by filtered arc deposition

Citation
Ds. Mao et al., Electron field emission from nitrogen-containing diamond-like carbon filmsdeposited by filtered arc deposition, MATER LETT, 41(3), 1999, pp. 117-121
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS LETTERS
ISSN journal
0167577X → ACNP
Volume
41
Issue
3
Year of publication
1999
Pages
117 - 121
Database
ISI
SICI code
0167-577X(199911)41:3<117:EFEFND>2.0.ZU;2-H
Abstract
In this paper, electron field emission properties and fluorescent displays of 300 nm thick nitrogen-containing diamond-like carbon (DLC:N) films are r eported. The films were deposited on to highly n-doped Si (111) substrates by filtered are deposition (FAD) with different N-2 partial pressures (0.01 , 0.05, 0.1 Pa) in the deposition chamber. Their electron field emission pr operties were studied using a simple diode structure. It was shown that the DLC:N film possessed enhanced field emission properties when a N-2 pressur e of 0.05 Pa was used. Emission current of 0.1 mu A was detected under the electric field of 8.1 V/mu m. An emission current density of 0.204 mA/cm(2) was obtained under 17.8 V/mu m. (C) 1999 Elsevier Science B.V. All rights reserved.