High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part II: sputtering yield transients, the approach to high-fluence equilibrium

Citation
Yw. Zhang et al., High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si Part II: sputtering yield transients, the approach to high-fluence equilibrium, NUCL INST B, 159(3), 1999, pp. 133-141
Citations number
24
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
159
Issue
3
Year of publication
1999
Pages
133 - 141
Database
ISI
SICI code
0168-583X(199911)159:3<133:HCIISS>2.0.ZU;2-N
Abstract
The partial sputtering yields of different species from silicon dioxide/Si and silicon nitride/Si during high-fluence keV Co Metal Vapour Vacuum Are ( MEVVA) irradiation are of importance for both silicide formation and interp retation of sputter profiling. Three sets of samples, nitride/Si(1 0 0), ox ide/Si(1 0 0) and oxide/Si(1 1 1), have been bombarded to different normal fluences, Theta, from 1x10(16) to 2.6x10(18) ions cm(-2). The partial sputt ering yields for N and Si in the thick nitride films are similar to 1.0 and similar to 0.65, respectively, which indicates that the relative sputterin g ratio of N/Si is similar to 1.5. The partial sputtering yields for O and Si of oxide/Si(1 0 0) samples are determined as similar to 1.0 and similar to 0.3, respectively. Although the O and Si sputtering yields from oxide/Si (1 1 1) samples are similar to 15% higher. the average sputtering ratio of O/Si is similar to 3.4, the same for both sets of oxide/Si samples. As expe cted, the partial sputtering yield of Co, Y-Co(Theta), is small for low flu ence implantation and increases with increasing Co fluence. At a normal flu ence of similar to 5x10(17) ions cm(-2), Y-Co(Theta) reaches the high fluen ce quasi-equilibrium limit, the value is very close to unity. The sputterin g yield of Co reduces slightly at even higher fluences, which is associated with erosion of the sample surface. (C) 1999 Elsevier Science B.V. All rig hts reserved.