Effect of MeV O2+ implantation on the reactive ion etch rate of LiTaO3

Authors
Leech, PW Ridgway, MC
Citation
Pw. Leech et Mc. Ridgway, Effect of MeV O2+ implantation on the reactive ion etch rate of LiTaO3, NUCL INST B, 159(3), 1999, pp. 187-190
Citations number
7
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN journal
0168583X → ACNP
Volume
159
Issue
3
Year of publication
1999
Pages
187 - 190
Database
ISI
SICI code
0168-583X(199911)159:3<187:EOMOIO>2.0.ZU;2-8
Abstract
The etch rate of LiTaO3 in CF4/CHF3 plasmas was increased by similar to 50% by prior implantation with MeV O2- ions. The etch rate of LiTaO3 was shown to increase with ion dose, indicating an effect of the implant-induced nuc lear damage on the etch process. In general terms, the reactive ion etching of LiTaO3 in CF4/CHF3 plasmas has been identified as a process of ion-enha nced chemical etching. (C) 1999 Elsevier Science B.V. All rights reserved.