Il. Smolsky et al., X-ray topographic study of striation formation in layer growth of crystalsfrom solutions, PHI T ROY A, 357(1761), 1999, pp. 2631-2649
Citations number
25
Categorie Soggetti
Multidisciplinary
Journal title
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
The Lang X-ray topography method and double-crystal plane-wave X-ray topogr
aphy combined with image treatment have been used to study the zonal inhomo
geneity formation during crystal growth from solutions. It is shown that st
riation formation in crystals can be caused not only by the variations of t
he external growth conditions, but also by the action of some 'internal' fa
ctors such as the variations in the dislocation structure of the crystal an
d modification of the growth-step distribution on the growing faces. The ho
mogeneity of rapidly grown KDP crystals (10-16 mm d(-1)) was quantitatively
evaluated with accuracy of ca. 10(-7) Angstrom.