X-ray topographic study of striation formation in layer growth of crystalsfrom solutions

Citation
Il. Smolsky et al., X-ray topographic study of striation formation in layer growth of crystalsfrom solutions, PHI T ROY A, 357(1761), 1999, pp. 2631-2649
Citations number
25
Categorie Soggetti
Multidisciplinary
Journal title
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
ISSN journal
1364503X → ACNP
Volume
357
Issue
1761
Year of publication
1999
Pages
2631 - 2649
Database
ISI
SICI code
1364-503X(19991015)357:1761<2631:XTSOSF>2.0.ZU;2-I
Abstract
The Lang X-ray topography method and double-crystal plane-wave X-ray topogr aphy combined with image treatment have been used to study the zonal inhomo geneity formation during crystal growth from solutions. It is shown that st riation formation in crystals can be caused not only by the variations of t he external growth conditions, but also by the action of some 'internal' fa ctors such as the variations in the dislocation structure of the crystal an d modification of the growth-step distribution on the growing faces. The ho mogeneity of rapidly grown KDP crystals (10-16 mm d(-1)) was quantitatively evaluated with accuracy of ca. 10(-7) Angstrom.