High-resolution characterization of microdefects by X-ray diffuse scattering

Highly tellurium-doped GaAs samples were investigated by high-resolution X- ray diffractometry in the triple-axis mode. Different reciprocal maps, depe nding on the technological process, are presented and interpreted as caused by different microdefects. Computer simulations allow us to determine the type of microdefects, namely the orthorhombic defects and dislocations loop s. A theoretical. approach for defects composed of several atoms is propose d. Alternative descriptions of pairs of defects as uniform distributions of such paired defects or con-uniform distributions of single-defect componen ts are presented.