AgInTe2 thin films were prepared by pulsed laser deposition. The films were
obtained on glass substrates at temperature 750 to 780 K. The structure of
the films and its lattice parameters were estimated from the X-ray diffrac
tion measurements. The films were single phase, polycrystalline and had cha
lcopyrite structure. Absorption coefficient was determined from reflection
and transmission measurements in the photon energy range from 500 to about
2500 nm. Band-to-band transition energies and crystal-field (Delta(CF)) and
spin-orbit (Delta(SO)) parameters were calculated from the absorption spec
tra in the region of the fundamental absorption edge. These results are com
pared with existing data of single-crystalline AgInTe2 bulk material.