Optical properties of AgInTe2 films prepared by pulsed laser deposition

Citation
Iv. Bodnar et al., Optical properties of AgInTe2 films prepared by pulsed laser deposition, PHYS ST S-A, 175(2), 1999, pp. 607-613
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
175
Issue
2
Year of publication
1999
Pages
607 - 613
Database
ISI
SICI code
0031-8965(19991016)175:2<607:OPOAFP>2.0.ZU;2-Q
Abstract
AgInTe2 thin films were prepared by pulsed laser deposition. The films were obtained on glass substrates at temperature 750 to 780 K. The structure of the films and its lattice parameters were estimated from the X-ray diffrac tion measurements. The films were single phase, polycrystalline and had cha lcopyrite structure. Absorption coefficient was determined from reflection and transmission measurements in the photon energy range from 500 to about 2500 nm. Band-to-band transition energies and crystal-field (Delta(CF)) and spin-orbit (Delta(SO)) parameters were calculated from the absorption spec tra in the region of the fundamental absorption edge. These results are com pared with existing data of single-crystalline AgInTe2 bulk material.